(B) Given the relation: $I = e^{\frac{1000V}{T}} - 1$.Differentiating with respect to $V$:$\frac{dI}{dV} = \frac{1000}{T} e^{\frac{1000V}{T}}$.Thus,$d

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(B) Given the relation: $I = e^{\frac{1000V}{T}} - 1$.Differentiating with respect to $V$:$\frac{dI}{dV} = \frac{1000}{T} e^{\frac{1000V}{T}}$.Thus,$dI = \left( \frac{1000}{T} e^{\frac{1000V}{T}} \right) dV$.Given $I = 5 \, mA$,$T = 300 \, K$,and $dV = 0.01 \, V$.From the original equation,$I + 1 = e^{\frac{1000V}{T}}$.Substituting $I = 5$,we get $e^{\frac{1000V}{T}} = 5 + 1 = 6$.Now,substitute these values into the expression for $dI$:$dI = \left( \frac{1000}{300} \times 6 \right) \times 0.01$.$dI = \left( \frac{10}{3} \times 6 \right) \times 0.01$.$dI = 20 \times 0.01 = 0.2 \, mA$.

Class 12 Physics Semiconductor Electronics PN Junction and Diode

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The current-voltage relation of a diode is given by $I = \left( {{e^{\frac{{1000V}}{T}}} - 1} \right) \, mA$,where the applied voltage $V$ is in volts and the temperature $T$ is in Kelvin. If a student makes an error of $\pm 0.01 \, V$ while measuring the voltage to obtain a current of $5 \, mA$ at $300 \, K$,then the error in the value of the current in $mA$ is.....$mA$

A
$0.5$
B
$0.2$
C
$0.05$
D
$0.02$

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Class 12 Questions

Class 12

Physics Questions

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Semiconductor Electronics

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PN Junction and Diode

Both the diodes used in the circuit shown are assumed to be ideal and have negligible resistance when these are forward biased. The built-in potential in each diode is $0.7\; V$. For the input voltages shown in the figure,the voltage (in $Volts$) at point $A$ is

MediumJEE MAIN 2020

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Refer to the circuit diagram given in the figure. Which of the following observations are correct?
$A.$ Total resistance of the circuit is $6 \ \Omega$.
$B.$ Current in the ammeter is $1 \ A$.
$C.$ Potential across $AB$ is $4 \ V$.
$D.$ Potential across $CD$ is $4 \ V$.
$E.$ Total resistance of the circuit is $8 \ \Omega$.
Choose the correct answer from the options given below:

MediumJEE MAIN 2025

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Among the diodes shown in the following diagrams,which one is reverse biased?

MediumAIPMT 2004

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Two sides of a semiconductor germanium crystal $A$ and $B$ are doped with arsenic and indium respectively. They are connected to a battery as shown in the figure. The correct graph between current and voltage for the arrangement is:

MediumNEET 2017

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In a $p-n$ junction diode,the thickness of the depletion layer is $2 \times 10^{-6} \,m$ and the barrier potential is $0.3 \,V$. The intensity of the electric field at the junction is

EasyTS EAMCET 2011

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Both the diodes used in the circuit shown are assumed to be ideal and have negligible resistance when these are forward biased. The built-in potential in each diode is $0.7\; V$. For the input voltages shown in the figure,the voltage (in $Volts$) at point $A$ is

Among the diodes shown in the following diagrams,which one is reverse biased?

Two sides of a semiconductor germanium crystal $A$ and $B$ are doped with arsenic and indium respectively. They are connected to a battery as shown in the figure. The correct graph between current and voltage for the arrangement is:

In a $p-n$ junction diode,the thickness of the depletion layer is $2 \times 10^{-6} \,m$ and the barrier potential is $0.3 \,V$. The intensity of the electric field at the junction is

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